BSD314SPE H6327 数据手册
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技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies BSD314SPE H6327
- Power Dissipation (Pd): 500mW
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 1.5A
- Gate Threshold Voltage (Vgs(th)@Id): 2V@6.3uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@4.5V,1.2A
- Package: SOT-363-6
- Manufacturer: Infineon Technologies
